"14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time ..."

Eric Hunt-Schroeder et al. (2018)

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DOI: 10.1109/VLSIC.2018.8502415

access: closed

type: Conference or Workshop Paper

metadata version: 2022-02-25

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Eric Hunt-Schroeder, Darren Anand, John A. Fifield, Mark Jacunski, Michael Roberge, Dale E. Pontius, Kevin Batson, Toshiaki Kirihata:
14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming. VLSI Circuits 2018: 87-88

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