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"14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time ..."
Eric Hunt-Schroeder et al. (2018)
- Eric Hunt-Schroeder, Darren Anand, John A. Fifield, Mark Jacunski, Michael Roberge, Dale E. Pontius, Kevin Batson, Toshiaki Kirihata:
14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming. VLSI Circuits 2018: 87-88
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