"8T-SRAM Cell with Improved Read and Write Margins in 65 nm CMOS Technology."

Farshad Moradi et al. (2014)

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DOI: 10.1007/978-3-319-25279-7_6

access: open

type: Conference or Workshop Paper

metadata version: 2018-11-02

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Farshad Moradi, Mohammad Tohidi, Behzad Zeinali, Jens Kargaard Madsen:
8T-SRAM Cell with Improved Read and Write Margins in 65 nm CMOS Technology. VLSI-SoC (Selected Papers) 2014: 95-109

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