"Reducing Breakdown Voltage in a Bipolar Impact Ionization MOSFET (BI-MOS) ..."

Akshay Balaji, Sneh Saurabh (2021)

> Home

Details and statistics

DOI: 10.1109/VLSI-SOC53125.2021.9606982

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-19

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/vlsi/BalajiS21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/vlsi/BalajiS21
Akshay Balaji, Sneh Saurabh:
Reducing Breakdown Voltage in a Bipolar Impact Ionization MOSFET (BI-MOS) using Gate-Source Underlap. VLSI-SoC 2021: 1-6

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.