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"Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field ..."
Naeemul Islam et al. (2023)
- Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Hiroshi Kawarada, Mohd Syamsul, Alhan Farhanah Abd Rahim, Asrulnizam Abd Manaf:
Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study. RoViSP 2023: 133-139
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