"Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by ..."

Shouhei Fukuyama et al. (2018)

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DOI: 10.1109/NVMTS.2018.8603105

access: closed

type: Conference or Workshop Paper

metadata version: 2019-02-11

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Shouhei Fukuyama, Shinpei Matsuda, Ryutaro Yasuhara, Ken Takeuchi:
Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify. NVMTS 2018: 1-4

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