"STT-MRAM cell design with partial source line planes: improving the ..."

Raf Appeltans et al. (2015)

> Home

Details and statistics

DOI: 10.1109/NVMSA.2015.7304355

access: closed

type: Conference or Workshop Paper

metadata version: 2020-12-29

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/nvmsa/AppeltansCRVPD15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/nvmsa/AppeltansCRVPD15
Raf Appeltans, Stefan Cosemans, Praveen Raghavan, Diederik Verkest, Liesbet Van der Perre, Wim Dehaene:
STT-MRAM cell design with partial source line planes: improving the trade-off between area and series resistance. NVMSA 2015: 1-6

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.