"Baseband TIA Design Using Inversion Coefficient MOSFET Model in CMOS 28nm."

Léo Lançon et al. (2022)

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DOI: 10.1109/NEWCAS52662.2022.9842093

access: closed

type: Conference or Workshop Paper

metadata version: 2022-08-11

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Léo Lançon, Hugo Vallée, Gilles Montoriol, Fabien Brunelli, Thierry Taris:
Baseband TIA Design Using Inversion Coefficient MOSFET Model in CMOS 28nm. NEWCAS 2022: 15-19

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