"Si Nanocrystal MOSFET with Silicon Nitride Tunnel Insulator for High-rate ..."

Ryuji Ohba et al. (2006)

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DOI: 10.1109/ISVLSI.2006.83

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-24

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Ryuji Ohba, Daisuke Matsushita, Koichi Muraoka, Shinichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita:
Si Nanocrystal MOSFET with Silicon Nitride Tunnel Insulator for High-rate Random Number Generation. ISVLSI 2006: 231-236

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