"Independently-Controlled-Gate FinFET 6T SRAM Cell Design for Leakage ..."

Kaisheng Ma et al. (2014)

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DOI: 10.1109/ISVLSI.2014.25

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-24

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Kaisheng Ma, Huichu Liu, Yang Xiao, Yang Zheng, Xueqing Li, Sumeet Kumar Gupta, Yuan Xie, Vijaykrishnan Narayanan:
Independently-Controlled-Gate FinFET 6T SRAM Cell Design for Leakage Current Reduction and Enhanced Read Access Speed. ISVLSI 2014: 296-301

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