"29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant ..."

Jong-Hyeok Yoon et al. (2021)

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DOI: 10.1109/ISSCC42613.2021.9365926

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type: Conference or Workshop Paper

metadata version: 2021-03-10

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Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification. ISSCC 2021: 404-406

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