"A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at ..."

Liqiong Wei et al. (2019)

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DOI: 10.1109/ISSCC.2019.8662444

access: closed

type: Conference or Workshop Paper

metadata version: 2019-05-23

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Liqiong Wei, Juan G. Alzate, Umut Arslan, Justin Brockman, Nilanjan Das, Kevin Fischer, Tahir Ghani, Oleg Golonzka, Patrick Hentges, Rawshan Jahan, Pulkit Jain, Blake C. Lin, Mesut Meterelliyoz, Jim O'Donnell, Conor Puls, Pedro A. Quintero, Tanaya Sahu, Meenakshi Sekhar, Ajay Vangapaty, Chris Wiegand, Fatih Hamzaoglu:
A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique. ISSCC 2019: 214-216

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