"A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and ..."

Wataru Otsuka et al. (2011)

> Home

Details and statistics

DOI: 10.1109/ISSCC.2011.5746286

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/isscc/OtsukaMKTTYNTO11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/isscc/OtsukaMKTTYNTO11
Wataru Otsuka, Koji Miyata, Makoto Kitagawa, Keiichi Tsutsui, Tomohito Tsushima, Hiroshi Yoshihara, Tomohiro Namise, Yasuhiro Terao, Kentaro Ogata:
A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput. ISSCC 2011: 210-211

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.