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"15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a ..."

Ku-Feng Lin et al. (2024)

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DOI: 10.1109/ISSCC49657.2024.10454339

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

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  dblp key:
  - conf/isscc/LinNSYLCHLLHTANYGSJWJWCWCCWC24
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  - https://dblp.org/rec/conf/isscc/LinNSYLCHLLHTANYGSJWJWCWCCWC24
Ku-Feng Lin, Hiroki Noguchi, Yi-Chun Shih, Perng-Fei Yuh, Yuan-Jen Lee, Tung-Cheng Chang, Sheng-Po Huang, Yu-Fan Lin, Chun-Ying Lee, Yen-Hsiang Huang, Jui-Che Tsai, Saman Adham, Peter Noel, Ramin Yazdi, Marat Gershoig, YangJae Shin, Vineet Joshi, Ted Wong, Meng-Ru Jiang, J. J. Wu, Chun-Tai Cheng, Yu-Jen Wang, Harry Chuang, Yu-Der Chih, Yih Wang, Tsung-Yung Jonathan Chang:
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10¹² Write Endurance and Integrated Margin-Expansion Schemes. ISSCC 2024: 292-294

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