"94% power-recycle and near-zero driving-dead-zone N-type low-dropout ..."

Wei-Chung Chen et al. (2018)

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DOI: 10.1109/ISSCC.2018.8310371

access: closed

type: Conference or Workshop Paper

metadata version: 2018-03-14

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Wei-Chung Chen, Tzu-Chi Huang, Chao-Chang Chiu, Chih-Wei Chang, Kuo-Chun Hsu:
94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone. ISSCC 2018: 436-438

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