"15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology ..."

Jonathan Chang et al. (2020)

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DOI: 10.1109/ISSCC19947.2020.9062967

access: closed

type: Conference or Workshop Paper

metadata version: 2020-04-18

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Jonathan Chang, Yen-Huei Chen, Gary Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li:
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. ISSCC 2020: 238-240

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