"2T Neuromorphic Device based on oxide semiconductor with High Linearity ..."

Seongmin Park et al. (2022)

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DOI: 10.1109/ISOCC56007.2022.10031489

access: closed

type: Conference or Workshop Paper

metadata version: 2023-02-15

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Seongmin Park, Gilsu Jeon, Suwon Seong, Yoonyoung Chung:
2T Neuromorphic Device based on oxide semiconductor with High Linearity and Symmetry for High-Precision Training. ISOCC 2022: 151-152

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