"A simulation study about the memory operation of 3D-stacked capacitor-less ..."

Taegun Kim et al. (2023)

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DOI: 10.1109/ISOCC59558.2023.10396222

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-22

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Taegun Kim, Dong Keun Lee, Sihyun Kim, Sangwan Kim:
A simulation study about the memory operation of 3D-stacked capacitor-less 1T DRAM cells based on ferroelectric field-effect transistors (FeFETs). ISOCC 2023: 135-136

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