"Parasitic BJT versus DIBL: Floating-body-related subthreshold ..."

D. H. Lung et al. (2014)

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DOI: 10.1109/ISICIR.2014.7029443

access: closed

type: Conference or Workshop Paper

metadata version: 2022-06-09

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D. H. Lung, S. K. Hu, James B. Kuo, D. Chen, Y. J. Chen:
Parasitic BJT versus DIBL: Floating-body-related subthreshold characteristics of SOI NMOS device. ISIC 2014: 412-415

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