"Gate Metal Work Function Engineering for the Improvement of Electrostatic ..."

Deepak Soni et al. (2017)

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DOI: 10.1109/INIS.2017.47

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type: Conference or Workshop Paper

metadata version: 2024-10-06

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Deepak Soni, Dheeraj Sharma, Shivendra Yadav, Mohd. Aslam, Dharmendra Singh Yadav, Neeraj Sharma:
Gate Metal Work Function Engineering for the Improvement of Electrostatic Behaviour of Doped Tunnel Field Effect Transistor. iNIS 2017: 190-194

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