"Novel Threshold Voltage Model Incorporating Band-to-Band Tunneling in ..."

Joy Chowdhury et al. (2019)

> Home

Details and statistics

DOI: 10.1109/ISES47678.2019.00092

access: closed

type: Conference or Workshop Paper

metadata version: 2022-12-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/ises/ChowdhuryDSM19
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/ises/ChowdhuryDSM19
Joy Chowdhury, Arpan Deyasi, Angsuman Sarkar, Kamalakanta Mahapatra:
Novel Threshold Voltage Model Incorporating Band-to-Band Tunneling in Heterostructure p-MOSFET. iSES 2019: 373-376

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.