"Transposable Memory Based on the Ferroelectric Field-Effect Transistor."

Jianze Wang et al. (2024)

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DOI: 10.1109/ISCAS58744.2024.10558599

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-25

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Jianze Wang, Wei Zhang, Zhen Wu, Yimin Wang, Leming Jiao, Xiaolin Wang, Xiao Gong, Xuanyao Fong:
Transposable Memory Based on the Ferroelectric Field-Effect Transistor. ISCAS 2024: 1-5

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