"Physics-informed machine learning to analyze oxide defect-induced RTN in ..."

Anirudh Varanasi et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529341

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Anirudh Varanasi, Robin Degraeve, Philippe J. Roussel, Andrea Vici, Clement Merckling:
Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current. IRPS 2024: 1-7

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