"New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs."

Christoforos G. Theodorou et al. (2015)

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DOI: 10.1109/IRPS.2015.7112833

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo:
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. IRPS 2015: 1

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