"Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS ..."

Yutaka Terao et al. (2022)

> Home

Details and statistics

DOI: 10.1109/IRPS48227.2022.9764433

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/TeraoHKSW22
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/TeraoHKSW22
Yutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe:
Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. IRPS 2022: 66-1

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.