"Characterization of Interface Trap Density in SiC MOSFETs Subjected to ..."

S. R. Stein et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529394

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type: Conference or Workshop Paper

metadata version: 2024-11-22

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S. R. Stein, J. Kim, Suman Das, Daniel J. Lichtenwalner, Sei-Hyung Ryu:
Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress. IRPS 2024: 1-5

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