"Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress ..."

Rajat Sinha et al. (2020)

> Home

Details and statistics

DOI: 10.1109/IRPS45951.2020.9128355

access: closed

type: Conference or Workshop Paper

metadata version: 2020-09-05

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/SinhaBSS20
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/SinhaBSS20
Rajat Sinha, Prasenjit Bhattacharya, Sanjiv Sambandan, Mayank Shrivastava:
Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress Conditions. IRPS 2020: 1-6

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.