"On the ESD behavior of a-Si: H based thin film transistors: Physical ..."

Rajat Sinha et al. (2018)

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DOI: 10.1109/IRPS.2018.8353572

access: closed

type: Conference or Workshop Paper

metadata version: 2019-10-19

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Rajat Sinha, Prasenjit Bhattacharya, Sanjiv Sambandan, Mayank Shrivastava:
On the ESD behavior of a-Si: H based thin film transistors: Physical insights, design and technological implications. IRPS 2018: 3

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