"Origin of physical degradation in AlGaN/GaN on Si high electron mobility ..."

Wardhana A. Sasangka et al. (2015)

> Home

Details and statistics

DOI: 10.1109/IRPS.2015.7112768

access: closed

type: Conference or Workshop Paper

metadata version: 2022-03-23

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/SasangkaSGT15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/SasangkaSGT15
Wardhana A. Sasangka, Govindo J. Syaranamual, Chee Lip Gan, Carl V. Thompson:
Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. IRPS 2015: 6

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.