"Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NAND."

Lina Qu et al. (2023)

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DOI: 10.1109/IRPS48203.2023.10117688

access: closed

type: Conference or Workshop Paper

metadata version: 2023-05-24

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Lina Qu, Shengwei Yang, Ming He, Rui Fang, Xiaojuan Zhu, Kun Han, Yi He:
Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NAND. IRPS 2023: 1-4

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