"Study of the Walk-Out Effect of Junction Breakdown Instability of the ..."

Chieh Roger Lo et al. (2020)

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DOI: 10.1109/IRPS45951.2020.9129216

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-14

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  - conf/irps/LoYCLWLCCLL20
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  - https://dblp.org/rec/conf/irps/LoYCLWLCCLL20
Chieh Roger Lo, Teng-Hao Yeh, Wei-Chen Chen, Hang-Ting Lue, Keh-Chung Wang, Chih-Yuan Lu, Yao-Wen Chang, Yung-Hsiang Chen, Chu-Yung Liu:
Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution. IRPS 2020: 1-6

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