"Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs."

Camille Leurquin et al. (2023)

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DOI: 10.1109/IRPS48203.2023.10117813

access: closed

type: Conference or Workshop Paper

metadata version: 2024-07-08

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Camille Leurquin, William Vandendaele, Romain Gwoziecki, B. Mohamad, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant:
Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. IRPS 2023: 1-6

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