Stop the war!
Остановите войну!
for scientists:
default search action
"Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and ..."
Joseph P. Kozak et al. (2020)
- Joseph P. Kozak, Ruizhe Zhang, Jingcun Liu, Khai D. T. Ngo, Yuhao Zhang:
Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching. IRPS 2020: 1-6
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.