"Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory."

Kuan-Ting Chen et al. (2020)

> Home

Details and statistics

DOI: 10.1109/IRPS45951.2020.9129088

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/ChenLLCCSTYHCLC20
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/ChenLLCCSTYHCLC20
Kuan-Ting Chen, C. Lo, Y.-Y. Lin, C.-Y. Chueh, C. Chang, G.-Y. Siang, Y.-J. Tseng, Y.-J. Yang, F.-C. Hsieh, S.-H. Chang, H. Liang, S.-H. Chiang, J.-H. Liu, Y.-D. Lin, P.-C. Yeh, C.-Y. Wang, H.-Y. Yang, P.-J. Tzeng, M.-H. Liao, Shu-Tong Chang, Y.-Y. Tseng, Min-Hung Lee:
Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory. IRPS 2020: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.