"Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under ..."

Edward Van Brunt et al. (2023)

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DOI: 10.1109/IRPS48203.2023.10117702

access: closed

type: Conference or Workshop Paper

metadata version: 2023-05-24

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Edward Van Brunt, Daniel J. Lichtenwalner, J. H. Park, Satyaki Ganguly, J. W. McPherson:
Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations. IRPS 2023: 1-4

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