"Low frequency noise in MOS2 negative capacitance field-effect transistor."

Sami Alghamdi et al. (2018)

> Home

Details and statistics

DOI: 10.1109/IRPS.2018.8353696

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/AlghamdiSYY18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/AlghamdiSYY18
Sami Alghamdi, Mengwei Si, Lingming Yang, Peide D. Ye:
Low frequency noise in MOS2 negative capacitance field-effect transistor. IRPS 2018: 1

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.