"Proposal of P-Channel FE NAND with High Drain Current and Feasible ..."

Song-Hyeon Kuk et al. (2023)

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DOI: 10.1109/IMW56887.2023.10145967

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-16

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Song-Hyeon Kuk, Jae-Hoon Han, Bong Ho Kim, Junpyo Kim, Sang-Hyeon Kim:
Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND. IMW 2023: 1-4

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