"First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench ..."

K. Banerjee et al. (2021)

> Home

Details and statistics

DOI: 10.1109/IMW51353.2021.9439620

access: closed

type: Conference or Workshop Paper

metadata version: 2024-06-09

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/imw2/BanerjeeBMPSMPB21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/imw2/BanerjeeBMPSMPB21
K. Banerjee, Laurent Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, Geert Van den Bosch, Jan Van Houdt:
First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. IMW 2021: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.