"Silicon CMOS compatible transition metal dioxide technology for boosting ..."

Pablo Sanchis et al. (2014)

> Home

Details and statistics

DOI: 10.1109/ICTON.2014.6876505

access: closed

type: Conference or Workshop Paper

metadata version: 2023-05-10

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/icton/SanchisSCRGBSOC14
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/icton/SanchisSCRGBSOC14
Pablo Sanchis, L. Sánchez, Pau Castera, Alvaro Rosa, Ana M. Gutiérrez, Antoine Brimont, Guillaume Saint-Girons, Régis Orobtchouk, Sébastien Cueff, Pedro Rojo-Romeo, Romain Bachelet, Philippe Regreny, Bertrand Vilquin, Catherine Dubourdieu, Xavier Letartre, G. Grenet, José Penuelas, X. Hu, L. Louahadj, Jean-Pierre Locquet, L. Zimmermann, Chiara Marchiori, Stefan Abel, Jean Fompeyrine, A. Hakansson:
Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance. ICTON 2014: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.