"GaAs mHEMT Technology Achieving a High Cut-Off Frequncy of 446 GHz with a ..."

Jong Yul Park et al. (2024)

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DOI: 10.1109/ICTC62082.2024.10826917

access: closed

type: Conference or Workshop Paper

metadata version: 2025-01-29

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Jong Yul Park, Byoung-Gue Min, Jong-Min Lee, Woojin Chang, Honggu Ji, Junhyung Jeong, Junhyung Kim, Gyejung Lee, Kyujun Cho, Dong Min Kang:
GaAs mHEMT Technology Achieving a High Cut-Off Frequncy of 446 GHz with a Gate Length of 75 nm. ICTC 2024: 1468-1469

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