"New Proposed Methodology for Radiation Hardening By Design of MOS Circuits."

Hesham Hassan Shaker et al. (2020)

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DOI: 10.1109/ICM50269.2020.9331495

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Hesham Hassan Shaker, A. A. Saleh, Mohamed Refky Amin, S. E.-D. Habib:
New Proposed Methodology for Radiation Hardening By Design of MOS Circuits. ICM 2020: 1-4

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