default search action
"Simulation of p-type Schottky Diode Based on Al0.29Ga0.71As with ..."
Walid Filali et al. (2018)
- Walid Filali, Slimane Oussalah, Noureddine Sengouga, Mohamed Henini, David Taylor:
Simulation of p-type Schottky Diode Based on Al0.29Ga0.71As with Titanium/Gold Schottky Contact. ICM 2018: 272-275
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.