"Modeling the variation of threshold voltage, mobility factor and ..."

Y. Hernandez-Barrios et al. (2016)

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DOI: 10.1109/ICEEE.2016.7751186

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-14

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Y. Hernandez-Barrios, F. Avila-Herrera, Magali Estrada, Antonio Cerdeira, Oana Moldovan, Benjamín Iñíguez, Rodrigo Picos:
Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors. CCE 2016: 1-4

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