"ESD reliability building in 0.25 μm 60-V p-channel LDMOS DUTs with ..."

Shen-Li Chen et al. (2015)

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DOI: 10.1109/ICCE-TW.2015.7216891

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-26

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Shen-Li Chen, Yu-Ting Huang, Shawn Chang, Shun-Bao Chang:
ESD reliability building in 0.25 μm 60-V p-channel LDMOS DUTs with different embedded SCRs. ICCE-TW 2015: 268-269

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