"TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On ..."

Srinivas Varma et al. (2022)

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DOI: 10.1109/ICCCNT54827.2022.9984597

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type: Conference or Workshop Paper

metadata version: 2023-01-11

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Srinivas Varma, Ch Pratyusha Chowdari, D. Jayanthi, Asisa Kumar Panigrahi, K. Jamal:
TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications. ICCCNT 2022: 1-6

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