"A Physics-Based Model for a SiC JFET Device Accounting for the Mobility ..."

Elisa Platania et al. (2008)

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DOI: 10.1109/08IAS.2008.364

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-21

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Elisa Platania, Zhiyang Chen, Filippo Chimento, Liqing Lu, Enrico Santi, Angelo Raciti, Jerry L. Hudgins, H. Alan Mantooth, David C. Sheridan, J. Cassady:
A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field. IAS 2008: 1-8

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