"Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs."

L. Lu et al. (2007)

> Home

Details and statistics

DOI: 10.1109/07IAS.2007.44

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/iasam/LuCBSHP07
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/iasam/LuCBSHP07
L. Lu, Z. Chen, Angus T. Bryant, Enrico Santi, Jerry L. Hudgins, Patrick R. Palmer:
Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs. IAS 2007: 342-349

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.