"Floating gate memory based on MoS2 channel and iCVD polymer tunneling ..."

Myung Hun Woo et al. (2016)

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DOI: 10.1109/ESSDERC.2016.7599644

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-25

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Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, Sung-Yool Choi:
Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric. ESSDERC 2016: 295-298

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