"A full-quantum simulation study of InGaAs NW MOSFETs including interface ..."

Michele Visciarelli et al. (2016)

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DOI: 10.1109/ESSDERC.2016.7599616

access: closed

type: Conference or Workshop Paper

metadata version: 2018-11-02

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Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani:
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. ESSDERC 2016: 180-183

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