"Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an ..."

Ryosho Nakane, Shoichi Sato, Masaaki Tanaka (2019)

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DOI: 10.1109/ESSDERC.2019.8901832

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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Ryosho Nakane, Shoichi Sato, Masaaki Tanaka:
Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel. ESSDERC 2019: 142-145

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