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"Influence of device scaling on low-frequency noise in SOI tri-gate N- and ..."
Masahiro Koyama et al. (2013)
- Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo
, Hiroshi Iwai, Gilles Reimbold:
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC 2013: 300-303
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