"Influence of device scaling on low-frequency noise in SOI tri-gate N- and ..."

Masahiro Koyama et al. (2013)

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DOI: 10.1109/ESSDERC.2013.6818878

access: closed

type: Conference or Workshop Paper

metadata version: 2022-01-03

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Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold:
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC 2013: 300-303

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